#2N3055 TRANSISTOR HOW TO#

#2N3055 TRANSISTOR HOW TO#

The query regarding how to install 2N3005 would include either mechanical or electronic installations procedures, we’ll discuss both of them here. Now let’s study some of the important and interesting practical operations associated with 2N3055 transistors. Safe Operating Area = 2.87 Amp × 40 V for 1 second pulse. HFE = 20 (min), 70 (max) IC = 4 Amp, and VCE = 4 Volts,

The following data provides the actual figures involved with the various 2N3055 specifications: Again, it’s the information through which the heatsink parameters may be calculated. PTC = Maximum allowable dissipation (heat) from the case at 25 degrees ambient temperature. The parameter provides the necessary data regarding the heatsink calculations for a particularly device. RƟjc = Thermal withstanding capacity from the case junction, or the maximum allowable case temperature for the device, above which the device might go through a thermal run-away situation to become permanently damaged. HFE = DC Forward Current Gain or the efficiency of the device to amplify a given signal to appreciable limits at the collector with respect to relatively lower base biasing voltages.įT = Transition frequency or the maximum frequency rate at which the device would operate optimally. VEBO = It’s the Emitter to Base breakdown voltage. VCBO = As above, it’s the device’s Collector to Base breakdown voltage. In simple words for a given device, the operations must be carried out and limited below these specified levels. VCEO = Indicates the Collector to Emitter Breakdown voltage of the particular device, or the maximum threshold voltage level beyond which the device may get damaged or blown off. The study of the following relevant acronyms is a must for all electronic students: Image Courtesy - 2N3055 Datasheet Explained for Easy Referenceīefore noting specific figures, readers should first become famliar with the various terminologies used on the 2N3055 spec sheet. Let’s have a more intense and precise study regarding the above specialization of the device in the following section.

The above versatility of the device in turn makes it easily replaceable with other power transistors having varied characteristics, relieving the users from the headache of searching identical compatible matches for their individual specific applications.

High frequency handling range, again attributing the device with a wide range utility feature.

Reasonable and consistent hFE gain makes it universally suitable and applicable for most purposes.

Sturdy TO-3 case encapsulation makes it easily mountable over heatsinks with snug face to face contact, enabling perfect heat dissipation from the device and ensuring optimum response.

Robust output current delivering capability makes it ideally suited for applications in power amplifiers and power inverters.

Low base to emitter voltage, makes it easily switchable even with nominal output potentials available from linear ICs without incorporating buffer stages.

High collector to emitter voltage handling capability makes it highly versatile for most power amplification applications.

Rugged design and packaging, makes it less vulnerable to mechanical stresses during procurement and transportation.

The device has become particularly popular due to some of its outstanding features, as summarized below: The basic application range include power switching, high fidelity amplification, shunt regulation, and forming the output stages of various power circuits. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The 2N3055 is a NPN Epitaxial-Base Planar Transistor that normally comes encapsulated in a metal Jedec TO-3 package. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 2N3055 is a semiconductor device used to amplify or switch electronic signals and electrical power.

2n3055 transistor